MSBTE I Scheme Practice MCQs of “Basic Electronics (22225)” | All Chapter MCQs | UNIT-2. Field Effect Transistors.

 

MSBTE I Scheme Practice MCQs of “Basic Electronics (22225)”

 

UNIT-2. Field Effect Transistors.

 

1. 

Junction Field Effect Transistors (JFET) contain how many diodes?

A.

4

B.

3

C.

2

D.

1

Answer: Option C

Explanation:

No answer description available for this question. 


2. 

When an input delta of 2 V produces a transconductance of 1.5 mS, what is the drain current delta?

A.

666 mA

B.

3 mA

C.

0.75 mA

D.

0.5 mA

Answer: Option B

Explanation:

No answer description available for this question.


3. 

When not in use, MOSFET pins are kept at the same potential through the use of:

A.

shipping foil

B.

nonconductive foam

C.

conductive foam

D.

a wrist strap

Answer: Option C

Explanation:

No answer description available for this question. 


4. 

D-MOSFETs are sometimes used in series to construct a cascode high-frequency amplifier to overcome the loss of:

A.

low output impedance

B.

capacitive reactance

C.

high input impedance

D.

inductive reactance

Answer: Option C

Explanation:

No answer description available for this question. 


5. 

A "U" shaped, opposite-polarity material built near a JFET-channel center is called the:

A.

Gate

B.

Block

C.

Drain

D.

heat sink

Answer: Option A

Explanation:

No answer description available for this question. 

 

 

6. 

When testing an n-channel D-MOSFET, resistance G to D = , resistance G to S = , resistance D to SS =  and 500 , depending on the polarity of the ohmmeter, and resistance D to S = 500 . What is wrong?

A.

short D to S

B.

open G to D

C.

open D to SS

D.

Nothing

Answer: Option D

Explanation:

No answer description available for this question. 


7. 

In the constant-current region, how will the IDS change in an n-channel JFET?

A.

As VGS decreases ID decreases.

B.

As VGS increases ID increases.

C.

As VGS decreases ID remains constant.

D.

As VGS increases ID remains constant.

Answer: Option A

Explanation:

No answer description available for this question. 


8. 

A MOSFET has how many terminals?

A.

2 or 3

B.

3

C.

4

D.

3 or 4

Answer: Option D

Explanation:

No answer description available for this question. 


9. 

IDSS can be defined as:

A.

the minimum possible drain current

B.

the maximum possible current with VGS held at –4 V

C.

the maximum possible current with VGS held at 0 V

D.

the maximum drain current with the source shorted

Answer: Option C

Explanation:

No answer description available for this question. 


10. 

What is the input impedance of a common-gate configured JFET?

A.

very low

B.

Low

C.

High

D.

very high

Answer: Option A

Explanation:

No answer description available for this question. 

 

 

11. 

JFET terminal "legs" are connections to the drain, the gate, and the:

A.

Channel

B.

Source

C.

Substrate

D.

Cathode

Answer: Option B

Explanation:

No answer description available for this question. 


12. 

A very simple bias for a D-MOSFET is called:

A.

self biasing

B.

gate biasing

C.

zero biasing

D.

voltage-divider biasing

Answer: Option C

Explanation:

No answer description available for this question. 


13. 

With the E-MOSFET, when gate input voltage is zero, drain current is:

A.

at saturation

B.

Zero

C.

IDSS

D.

widening the channel

Answer: Option B

Explanation:

No answer description available for this question. 


14. 

With a 30-volt VDD, and an 8-kilohm drain resistor, what is the E-MOSFET Q point voltage, with ID = 3 mA?

A.

6 V

B.

10 V

C.

24 V

D.

30 V

Answer: Option A

Explanation:

No answer description available for this question. 


15. 

When an input signal reduces the channel size, the process is called:

A.

Enhancement

B.

substrate connecting

C.

gate charge

D.

Depletion

Answer: Option D

Explanation:

No answer description available for this question.

 

 

16. 

Which JFET configuration would connect a high-resistance signal source to a low-resistance load?

A.

source follower

B.

common-source

C.

common-drain

D.

common-gate

Answer: Option A

Explanation:

No answer description available for this question. 


17. 

How will electrons flow through a p-channel JFET?

A.

from source to drain

B.

from source to gate

C.

from drain to gate

D.

from drain to source

Answer: Option D

Explanation:

No answer description available for this question. 


18. 

When VGS = 0 V, a JFET is:

A.

Saturated

B.

an analog device

C.

an open switch

D.

cut off

Answer: Option A

Explanation:

No answer description available for this question. 


19. 

When applied input voltage varies the resistance of a channel, the result is called:

A.

Saturization

B.

Polarization

C.

Cutoff

D.

field effect

Answer: Option D

Explanation:

No answer description available for this question. 


20. 

When is a vertical channel E-MOSFET used?

A.

for high frequencies

B.

for high voltages

C.

for high currents

D.

for high resistances

Answer: Option C

Explanation:

No answer description available for this question. 

 

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